LE25U20AMB Series

Serial Flash Memory, 2 Mb (256k x 8)

Catalog

Serial Flash Memory, 2 Mb (256k x 8)

Part	Mounting Type	Memory Interface	Package / Case	Package / Case [y]	Package / Case [x]	Memory Format	Supplier Device Package	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Size	Write Cycle Time - Word, Page	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Memory Type	Memory Organization [custom]	Memory Organization [custom]	Clock Frequency
ON Semiconductor LE25U20AMB-AH	Surface Mount	SPI	8-SOIC	3.9 mm	0.154 in	FLASH	8-SOP	2.3 V	3.6 V	2 Gbit	5 ms	85 °C	-40 °C	FLASH	Non-Volatile	256 K	8	30 MHz
ON Semiconductor LE25U20AQGTXG	Surface Mount	SPI	8-WFDFN Exposed Pad			FLASH	8-WDFN (2x3)	2.3 V	3.6 V	2 Gbit	5 ms	85 °C	-40 °C	FLASH	Non-Volatile	256 K	8	30 MHz
ON Semiconductor LE25U20AFDW00-AH						FLASH				2 Gbit

Catalog

Serial Flash Memory, 2 Mb (256k x 8)

Key Features

• Read / write operations enabled by single 2.5V power supply :2.30 to 3.60V supply voltage range

• Operating frequency : 30MHz

• Temperature range : -40 to 85°C

• Serial interface : SPI mode 0, mode 3 supported

• Sector size : 4K bytes/small sector, 64K bytes/sector

• Small sector erase, sector erase, chip erase functions

• Page program function (256 bytes / page)

• Block protect function

• Status functions : Ready/busy information, protect information

• Highly reliable read/writeNumber of rewrite times : 100,000 timesSmall sector erase time : 40ms (typ), 150ms (max)Sector erase time : 80ms (typ), 250ms (max)Chip erase time : 250ms (typ), 1.6s (max)Page program time : 4.0ms/256 bytes (typ), 5.0ms/256 bytes (max)

• Data retention period : 20 years

• Package : WDFN8 2x3

Description

The LE25U20AMB is a serial interface-compatible flash memory device with a 256K x 8-bit configuration. It uses a single 2.5 V power supply. While making the most of the features inherent to a serial flash memory device, the LE25U20AMB is housed in an 8-pin ultra-miniature package. These features make this device ideally suited to storing program codes in applications such as portable information devices, which are required to have increasingly more compact dimensions. Moreover, by using the small sector erase function this product is also suitable for the parameter or the date storage usage with comparatively little rewriting times that becomes a capacity shortage in EEPROM.