Discrete Semiconductor Products

SIRC06DP-T1-GE3

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MOSFET N-CH 30V 32A/60A PPAK SO8

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Discrete Semiconductor Products

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MOSFET N-CH 30V 32A/60A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SIRC06DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	32 A, 60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2455 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	50 W, 5 W
Rds On (Max) @ Id, Vgs [Max]	2.7 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Feature	Supplier Device Package	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SIRC06DP-T1-GE3	2.7 mOhm	30 V	PowerPAK® SO-8	-16 V 20 V	32 A 60 A	2.1 V	Schottky Diode (Body)	PowerPAK® SO-8	N-Channel	5 W 50 W	4.5 V 10 V	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	58 nC	2455 pF

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General part information

N-Channel 30 V 32A (Ta), 60A (Tc) 5W (Ta), 50W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources