SIRC06 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 30V 32A/60A PPAK SO8
| Part | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Package / Case | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | FET Feature | Supplier Device Package | FET Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2.7 mOhm | 30 V | PowerPAK® SO-8 | -16 V 20 V | 32 A 60 A | 2.1 V | Schottky Diode (Body) | PowerPAK® SO-8 | N-Channel | 5 W 50 W | 4.5 V 10 V | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 150 °C | 58 nC | 2455 pF |