Discrete Semiconductor Products
2N3766
ActiveMicrochip Technology
60V 4A NPN POWER BJT THT TO-66 ROHS COMPLIANT: YES
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Search across all available documentation for this part.
Discrete Semiconductor Products
2N3766
ActiveMicrochip Technology
60V 4A NPN POWER BJT THT TO-66 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3766 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 4 A |
| Current - Collector Cutoff (Max) [Max] | 500 çA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Mounting Type | Through Hole |
| Package / Case | TO-66-2, TO-213AA |
| Power - Max [Max] | 25 W |
| Supplier Device Package | TO-66 (TO-213AA) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 26.92 | |
| Microchip Direct | N/A | 1 | $ 28.99 | |
| Newark | Each | 100 | $ 26.92 | |
| 500 | $ 25.89 | |||
Description
General part information
2N3766-Transistor Series
This specification covers the performance requirements for NPN silicon, power, 2N3766 and 2N3767 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/518. The device package outline is a TO-213AA.
Documents
Technical documentation and resources