Discrete Semiconductor Products
BDV64BG
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, PNP, -100 V, 125 W, -10 A, 1000 ROHS COMPLIANT: YES
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Discrete Semiconductor Products
BDV64BG
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, PNP, -100 V, 125 W, -10 A, 1000 ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | BDV64BG |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.15 | |
| 10 | $ 2.73 | |||
| 100 | $ 1.92 | |||
| 500 | $ 1.58 | |||
| 1000 | $ 1.47 | |||
| 2000 | $ 1.41 | |||
| Newark | Each | 1 | $ 4.97 | |
| 10 | $ 4.36 | |||
| 25 | $ 3.70 | |||
| 60 | $ 3.04 | |||
| 120 | $ 2.91 | |||
| 270 | $ 2.78 | |||
| 510 | $ 2.45 | |||
| ON Semiconductor | N/A | 1 | $ 1.51 | |
Description
General part information
BDV64B Series
The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.
Documents
Technical documentation and resources