BDV64B Series

10 A, 100 V PNP Darlington Bipolar Power Transistor

Catalog

10 A, 100 V PNP Darlington Bipolar Power Transistor

Part	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Mounting Type
ON Semiconductor BDV64BG	1 mA	1000	TO-247-3	PNP - Darlington	2 V	150 °C	-65 °C	100 V	TO-247-3	Through Hole

Catalog

10 A, 100 V PNP Darlington Bipolar Power Transistor

Key Features

• High DC Current Gain HFE = 1000 (min.) @ 5 Adc

• Monolithic Construction with Built-in Base Emitter Shunt Resistors

• These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

Description

The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.