Specification	HGTG30N60B3

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	220 A
Gate Charge	170 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	208 W
Supplier Device Package	TO-247-3
Switching Energy	680 µJ, 500 µJ
Td (on/off) @ 25°C	36 ns, 137 ns
Test Condition	30 A, 480 V, 3 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

HGTG30N60C3D Series

IGBT, 600V, SMPS

Part	Vce(on) (Max) @ Vge, Ic	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	Power - Max [Max]	Package / Case	Current - Collector Pulsed (Icm)	Switching Energy	Gate Charge	Switching Energy [custom]	Switching Energy [custom]	Td (on/off) @ 25°C	Test Condition
ON Semiconductor HGTG30N60C3D	1.8 V	Through Hole	150 °C	-40 °C	TO-247	63 A	600 V	60 ns	208 W	TO-247-3	252 A	1.05 mJ 2.5 mJ	162 nC
ON Semiconductor HGTG30N60A4	2.6 V	Through Hole	150 °C	-55 °C	TO-247-3	75 A	600 V		463 W	TO-247-3	240 A		225 nC	240 µJ	280 µJ	25 ns 150 ns	3 Ohm 15 V 30 A 390 V
ON Semiconductor HGTG30N60B3	1.9 V	Through Hole	150 °C	-55 °C	TO-247-3	60 A	600 V		208 W	TO-247-3	220 A	500 µJ 680 µJ	170 nC			36 ns 137 ns	3 Ohm 15 V 30 A 480 V
ON Semiconductor HGTG30N60C3D	1.8 V	Through Hole	150 °C	-40 °C	TO-247-3	63 A	600 V	60 ns	208 W	TO-247-3	252 A	1.05 mJ 2.5 mJ	162 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	95	$ 3.16

Description

General part information

HGTG30N60C3D Series

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49014.