HGTG30N60C3D Series

IGBT, 600V, SMPS

Catalog

IGBT, 600V, SMPS

Part	Vce(on) (Max) @ Vge, Ic	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	Power - Max [Max]	Package / Case	Current - Collector Pulsed (Icm)	Switching Energy	Gate Charge	Switching Energy [custom]	Switching Energy [custom]	Td (on/off) @ 25°C	Test Condition
ON Semiconductor HGTG30N60C3D	1.8 V	Through Hole	150 °C	-40 °C	TO-247	63 A	600 V	60 ns	208 W	TO-247-3	252 A	1.05 mJ 2.5 mJ	162 nC
ON Semiconductor HGTG30N60A4	2.6 V	Through Hole	150 °C	-55 °C	TO-247-3	75 A	600 V		463 W	TO-247-3	240 A		225 nC	240 µJ	280 µJ	25 ns 150 ns	3 Ohm 15 V 30 A 390 V
ON Semiconductor HGTG30N60B3	1.9 V	Through Hole	150 °C	-55 °C	TO-247-3	60 A	600 V		208 W	TO-247-3	220 A	500 µJ 680 µJ	170 nC			36 ns 137 ns	3 Ohm 15 V 30 A 480 V
ON Semiconductor HGTG30N60C3D	1.8 V	Through Hole	150 °C	-40 °C	TO-247-3	63 A	600 V	60 ns	208 W	TO-247-3	252 A	1.05 mJ 2.5 mJ	162 nC

Catalog

IGBT, 600V, SMPS

Key Features

• 30A, 600V, TC= 110°C

• Low saturation voltage: VCE(sat) = 1.45V @ IC= 30A

• Typical Fall Time. . . . . . . . 90ns at TJ= 150°C

• Short Circuit Rating

• Low Conduction Loss

Description

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49014.