Discrete Semiconductor Products

CSD18512Q5B

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40V 100A 1.3MΩ@10V,30A 3.1W 1.6V 1 N-CHANNEL VSON-8(5X6) MOSFETS ROHS

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Discrete Semiconductor Products

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40V 100A 1.3MΩ@10V,30A 3.1W 1.6V 1 N-CHANNEL VSON-8(5X6) MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	CSD18512Q5B

Current - Continuous Drain (Id) @ 25°C	211 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7120 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	139 W
Rds On (Max) @ Id, Vgs	1.6 mOhm
Supplier Device Package	8-VSON-CLIP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
Texas Instruments CSD18512Q5B	MOSFET (Metal Oxide)	1.6 mOhm	-55 °C	150 °C	Surface Mount	8-PowerTDFN	211 A	139 W	2.2 V	7120 pF	20 V	4.5 V 10 V	8-VSON-CLIP (5x6)	N-Channel	40 V
Texas Instruments CSD18512Q5BT	MOSFET (Metal Oxide)	1.6 mOhm	-55 °C	150 °C	Surface Mount	8-PowerTDFN	211 A	139 W	2.2 V	7120 pF	20 V	4.5 V 10 V	8-VSON-CLIP (5x6)	N-Channel	40 V	98 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 211A (Tc) 139W (Tc) Surface Mount 8-VSON-CLIP (5x6)

Technical documentation and resources