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3-XQFN
Discrete Semiconductor Products

PBSS2540MB,315

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Nexperia USA Inc.

40 V, 0.5 A NPN LOW VCESAT (BISS) TRANSISTOR

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3-XQFN
Discrete Semiconductor Products

PBSS2540MB,315

Active
Nexperia USA Inc.

40 V, 0.5 A NPN LOW VCESAT (BISS) TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS2540MB,315
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]200
Frequency - Transition450 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-XFDFN
Power - Max [Max]250 mW
QualificationAEC-Q100
Supplier Device PackageDFN1006B-3
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.30
10$ 0.20
100$ 0.10
500$ 0.08
1000$ 0.06
2000$ 0.05
5000$ 0.05
Digi-Reel® 1$ 0.30
10$ 0.20
100$ 0.10
500$ 0.08
1000$ 0.06
2000$ 0.05
5000$ 0.05
N/A 9074$ 0.31
Tape & Reel (TR) 10000$ 0.04
20000$ 0.03
30000$ 0.03
50000$ 0.03
70000$ 0.03

Description

General part information

PBSS2540MB Series

NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB.