Discrete Semiconductor Products
STD70N10F4
ActiveSTMicroelectronics
N-CHANNEL 100 V, 0.015 OHM, 60 A, STRIPFET(TM) DEEPGATE(TM) POWER MOSFET IN DPAK
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DocumentsSTD70N10F4 | Datasheet
Discrete Semiconductor Products
STD70N10F4
ActiveSTMicroelectronics
N-CHANNEL 100 V, 0.015 OHM, 60 A, STRIPFET(TM) DEEPGATE(TM) POWER MOSFET IN DPAK
Deep-Dive with AI
DocumentsSTD70N10F4 | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | STD70N10F4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 85 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) @ Id, Vgs | 19.5 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1077 | $ 2.27 | |
Description
General part information
STD70N10F4 Series
This STripFET DeepGATE Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance.
Documents
Technical documentation and resources