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Discrete Semiconductor Products

JAN1N5623/TR

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Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 1KV, 1A, 500NS CASE A BAG T/R

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JAN--XXXX
Discrete Semiconductor Products

JAN1N5623/TR

Active
Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 1KV, 1A, 500NS CASE A BAG T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN1N5623/TR
Current - Average Rectified (Io)1 A
Current - Reverse Leakage @ Vr500 nA
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseA, Axial
QualificationMIL-PRF-19500/429
Reverse Recovery Time (trr)500 ns
Speed200 mA, 500 ns
Supplier Device PackageA, Axial
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1000 V
Voltage - Forward (Vf) (Max) @ If1.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 100$ 6.81
Microchip DirectN/A 1$ 7.34
NewarkEach 100$ 6.81
500$ 6.55

Description

General part information

JAN1N5623-TR-Rectifier Series

This "fast recovery" rectifier diode series is military qualified to MIL-PRF-19500/429 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal "Category I" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N5615US thru 1N5623US). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

Documents

Technical documentation and resources