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8-SOIC
Discrete Semiconductor Products

SI4448DY-T1-E3

Obsolete

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8-SOIC
Discrete Semiconductor Products

SI4448DY-T1-E3

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI4448DY-T1-E3
Current - Continuous Drain (Id) @ 25°C50 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]150 nC
Input Capacitance (Ciss) (Max) @ Vds12350 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)7.8 W, 3.5 W
Rds On (Max) @ Id, Vgs1.7 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SI4448 Series

N-Channel 12 V 50A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC

Documents

Technical documentation and resources