SI4448 Series

Catalog

MOSFET N-CH 12V 50A 8SO

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI4448DY-T1-GE3	N-Channel	50 A	1 V	-55 °C	150 °C	Surface Mount	3.5 W 7.8 W	1.8 V 4.5 V	8-SOIC	3.9 mm	0.154 in	12 V	12350 pF	MOSFET (Metal Oxide)	8 V	1.7 mOhm	150 nC	8-SOIC
Vishay General Semiconductor - Diodes Division SI4448DY-T1-E3	N-Channel	50 A	1 V	-55 °C	150 °C	Surface Mount	3.5 W 7.8 W	1.8 V 4.5 V	8-SOIC	3.9 mm	0.154 in	12 V	12350 pF	MOSFET (Metal Oxide)	8 V	1.7 mOhm	150 nC	8-SOIC