Specification	ATP102-TL-H

Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	1490 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	ATPAK (2 leads+tab)
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	18.5 mOhm
Supplier Device Package	ATPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

ATP102 Series

P-Channel Power MOSFET, -30V, -40A, 18.5mΩ

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor ATP102-TL-H	18.5 mOhm	20 V	4.5 V 10 V	Surface Mount	ATPAK	40 W	40 A	150 °C	ATPAK (2 leads+tab)	34 nC	MOSFET (Metal Oxide)	P-Channel	30 V	1490 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

ATP102 is P-Channel Power MOSFET, -30V, -40A, 18.5mΩ, Single ATPAK for general purpose switching applications.