Discrete Semiconductor Products
STS5NF60L
ActiveSTMicroelectronics
N-CHANNEL 60V - 0.045 OHM - 5A - SO-8 STRIPFET MOSFET
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
STS5NF60L
ActiveSTMicroelectronics
N-CHANNEL 60V - 0.045 OHM - 5A - SO-8 STRIPFET MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STS5NF60L |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 17 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1250 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) @ Id, Vgs | 55 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 6156 | $ 1.30 | |
Description
General part information
STS5NF60L Series
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Documents
Technical documentation and resources