Specification	2N5686

Current - Collector (Ic) (Max)	50 A
Current - Collector Cutoff (Max) [Max]	500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3, TO-204AA
Power - Max [Max]	300 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

2N5686-Transistor Series

MIL-PRF-19500/464

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max)	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Vce Saturation (Max) @ Ib, Ic
Microchip Technology 2N5686	80 V	300 W	500 çA	Through Hole	-55 °C	200 C	50 A	NPN	30 hFE	TO-204AA TO-3	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 74.82
Microchip Direct	N/A	1	$ 80.57
Newark	Each	100	$ 74.82
		500	$ 71.94

Description

General part information

2N5686-Transistor Series

This specification covers the performance requirements for NPN silicon, power, 2N5685 and 2N5686 transistors, complimentary to 2N5864 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/464. The device package outlines are as follows: TO-3 for all encapsulated device types.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

2N5685 and 2N5686

Data Sheets