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TO-247-3
Discrete Semiconductor Products

FFSH40120ADN-F085

Active
ON Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, ELITESIC SERIES, DUAL COMMON CATHODE, 1.2 KV, 40 A, 120 NC

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Search across all available documentation for this part.

DocumentsDatasheetSiC MOSFETs: Gate Drive Optimization+3
TO-247-3
Discrete Semiconductor Products

FFSH40120ADN-F085

Active
ON Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, ELITESIC SERIES, DUAL COMMON CATHODE, 1.2 KV, 40 A, 120 NC

Deep-Dive with AI

DocumentsDatasheetSiC MOSFETs: Gate Drive Optimization+3

Technical Specifications

Parameters and characteristics for this part

SpecificationFFSH40120ADN-F085
Capacitance @ Vr, F1220 pF
Current - Average Rectified (Io)25 A
Current - Reverse Leakage @ Vr200 µA
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseTO-247-3
QualificationAEC-Q101
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Supplier Device PackageTO-247-3
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 13.70
10$ 12.50
NewarkEach 1$ 22.43
5$ 21.89
10$ 21.36
25$ 20.89
50$ 20.47
ON SemiconductorN/A 1$ 11.50

Description

General part information

FFSH40120ADN-F085 Series

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.