FFSH40120ADN-F085 Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D1, TO-247-2L

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D1, TO-247-2L

Part	Current - Average Rectified (Io)	Grade	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Qualification	Reverse Recovery Time (trr)	Speed	Mounting Type	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Reverse Leakage @ Vr	Diode Configuration	Speed	Current - Average Rectified (Io) (per Diode)
ON Semiconductor FFSH40120ADN-F085	25 A	Automotive	1220 pF	1.2 kV	TO-247-3	AEC-Q101	0 ns	No Recovery Time	Through Hole	TO-247-3	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	200 µA
ON Semiconductor FFSH40120A	61 A		2250 pF	1.2 kV	TO-247-2		0 ns	No Recovery Time	Through Hole	TO-247-2	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	200 µA
ON Semiconductor FFSH40120ADN-F155				1.2 kV	TO-247-3				Through Hole	TO-247-3	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	200 µA	1 Pair Common Cathode	200 mA 500 ns	20 A

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D1, TO-247-2L

Key Features

• Max Junction Temperature 175 °C

• Avalanche Rated 210 mJ

• Positive Temperature Coefficient

• No Reverse Recovery / No Forward Recovery

• AEC-Q101 qualified and PPAP Capable

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.