APTGT30H60T1G

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600V/FULL BRIDGE/IGBT MODULES

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Discrete Semiconductor Products

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600V/FULL BRIDGE/IGBT MODULES

Technical Specifications

Parameters and characteristics for this part

Specification	APTGT30H60T1G

Configuration	Full Bridge Inverter
Current - Collector (Ic) (Max)	50 A
Current - Collector Cutoff (Max) [Max]	250 µA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	1.6 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	SP1
Power - Max [Max]	90 W
Supplier Device Package	SP1
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

600V/Three level inverter/IGBT modules

Part	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Package / Case	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	IGBT Type	Configuration	Voltage - Collector Emitter Breakdown (Max)	Input Capacitance (Cies) @ Vce	Input	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max)
Microchip Technology APTGT30H170T3G	250 µA	210 W	2.4 V	SP3	SP3	150 °C	-40 °C	Chassis Mount	Trench Field Stop	Full Bridge Inverter	1700 V	2.5 nF	Standard	45 A
Microchip Technology APTGT30TL601G	250 µA	90 W	1.9 V	SP1	SP1	175 °C	-40 C	Chassis Mount	Trench Field Stop	Three Level Inverter		1.6 nF	Standard		600 V	50 A
Microchip Technology APTGT30H60T1G	250 µA	90 W	1.9 V	SP1	SP1	175 °C	-40 C	Chassis Mount	Trench Field Stop	Full Bridge Inverter		1.6 nF	Standard		600 V	50 A
Microchip Technology APTGT30X60T3G	250 µA	90 W	1.9 V	SP3	SP3	175 °C	-40 C	Chassis Mount	Trench Field Stop	Three Phase Inverter		1.6 nF	Standard		600 V	50 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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