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CNY17F4TVM

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ON Semiconductor

6-PIN DIP HIGH BVCEO PHOTOTRANSISTOR OUTPUT OPTOCOUPLER

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DocumentsProduct Change Notice EN

Isolators

CNY17F4TVM

Active

ON Semiconductor

6-PIN DIP HIGH BVCEO PHOTOTRANSISTOR OUTPUT OPTOCOUPLER

Deep-Dive with AI

DocumentsProduct Change Notice EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CNY17F4TVM

Current - DC Forward (If) (Max) [Max]	60 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	320 %
Current Transfer Ratio (Min) [Min]	160 %
Input Type	DC
Mounting Type	Through Hole
Number of Channels	1
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Output Type	1.81 mOhm
Package / Case	6-DIP
Package / Case	10.16 mm
Package / Case	10.16 mm
Rise / Fall Time (Typ) [custom]	4 µs
Rise / Fall Time (Typ) [custom]	3.5 µs
Supplier Device Package	6-DIP
Turn On / Turn Off Time (Typ)	3 µs, 2 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.35 V
Voltage - Isolation	4170 Vrms
Voltage - Output (Max) [Max]	70 V

CNY17F4M Series

6-Pin DIP High BVCEO Phototransistor Output Optocoupler

Part	Supplier Device Package	Voltage - Output (Max) [Max]	Current - DC Forward (If) (Max) [Max]	Vce Saturation (Max) [Max]	Turn On / Turn Off Time (Typ)	Current - Output / Channel	Voltage - Forward (Vf) (Typ)	Number of Channels	Mounting Type	Package / Case	Current Transfer Ratio (Min) [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Isolation	Current Transfer Ratio (Max)	Input Type	Operating Temperature [Max]	Operating Temperature [Min]	Output Type	Package / Case	Package / Case	Package / Case
ON Semiconductor CNY17F4SVM	6-SMD	70 V	60 mA	400 mV	2 µs 3 µs	50 mA	1.35 V	1	Surface Mount	6-SMD Gull Wing	160 %	4 µs	3.5 µs	4170 Vrms	320 %	DC	100 °C	-40 °C	1.81 mOhm
ON Semiconductor CNY17F4SM	6-SMD	70 V	60 mA	400 mV	2 µs 3 µs	50 mA	1.35 V	1	Surface Mount	6-SMD Gull Wing	160 %	4 µs	3.5 µs	4170 Vrms	320 %	DC	100 °C	-40 °C	1.81 mOhm
ON Semiconductor CNY17F4SVM	6-SMD	70 V	60 mA	400 mV	2 µs 3 µs	50 mA	1.35 V	1	Surface Mount	6-SMD Gull Wing	160 %	4 µs	3.5 µs	4170 Vrms	320 %	DC	100 °C	-40 °C	1.81 mOhm
ON Semiconductor CNY17F4VM	6-DIP	70 V	60 mA	400 mV	2 µs 3 µs	50 mA	1.35 V	1	Through Hole	6-DIP	160 %	4 µs	3.5 µs	4170 Vrms	320 %	DC	100 °C	-40 °C	1.81 mOhm	0.3 in	7.62 mm
ON Semiconductor CNY17F4TVM	6-DIP	70 V	60 mA	400 mV	2 µs 3 µs	50 mA	1.35 V	1	Through Hole	6-DIP	160 %	4 µs	3.5 µs	4170 Vrms	320 %	DC	100 °C	-40 °C	1.81 mOhm		10.16 mm	10.16 mm
ON Semiconductor CNY17F4SR2VM	6-SMD	70 V	60 mA	400 mV	2 µs 3 µs	50 mA	1.35 V	1	Surface Mount	6-SMD Gull Wing	160 %	4 µs	3.5 µs	4170 Vrms	320 %	DC	100 °C	-40 °C	1.81 mOhm
ON Semiconductor CNY17F4M	6-DIP	70 V	60 mA	400 mV	2 µs 3 µs	50 mA	1.35 V	1	Through Hole	6-DIP	160 %	4 µs	3.5 µs	4170 Vrms	320 %	DC	100 °C	-40 °C	1.81 mOhm	0.3 in	7.62 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1416	$ 0.21
Newark	Each	1000	$ 0.24
		2500	$ 0.20
		10000	$ 0.19
ON Semiconductor	N/A	1	$ 0.20

Description

General part information

CNY17F4M Series

The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet