CNY17F4M Series

6-Pin DIP High BVCEO Phototransistor Output Optocoupler

Catalog

6-Pin DIP High BVCEO Phototransistor Output Optocoupler

Part	Supplier Device Package	Voltage - Output (Max) [Max]	Current - DC Forward (If) (Max) [Max]	Vce Saturation (Max) [Max]	Turn On / Turn Off Time (Typ)	Current - Output / Channel	Voltage - Forward (Vf) (Typ)	Number of Channels	Mounting Type	Package / Case	Current Transfer Ratio (Min) [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Isolation	Current Transfer Ratio (Max)	Input Type	Operating Temperature [Max]	Operating Temperature [Min]	Output Type	Package / Case	Package / Case	Package / Case
ON Semiconductor CNY17F4SVM	6-SMD	70 V	60 mA	400 mV	2 µs 3 µs	50 mA	1.35 V	1	Surface Mount	6-SMD Gull Wing	160 %	4 µs	3.5 µs	4170 Vrms	320 %	DC	100 °C	-40 °C	1.81 mOhm
ON Semiconductor CNY17F4SM	6-SMD	70 V	60 mA	400 mV	2 µs 3 µs	50 mA	1.35 V	1	Surface Mount	6-SMD Gull Wing	160 %	4 µs	3.5 µs	4170 Vrms	320 %	DC	100 °C	-40 °C	1.81 mOhm
ON Semiconductor CNY17F4SVM	6-SMD	70 V	60 mA	400 mV	2 µs 3 µs	50 mA	1.35 V	1	Surface Mount	6-SMD Gull Wing	160 %	4 µs	3.5 µs	4170 Vrms	320 %	DC	100 °C	-40 °C	1.81 mOhm
ON Semiconductor CNY17F4VM	6-DIP	70 V	60 mA	400 mV	2 µs 3 µs	50 mA	1.35 V	1	Through Hole	6-DIP	160 %	4 µs	3.5 µs	4170 Vrms	320 %	DC	100 °C	-40 °C	1.81 mOhm	0.3 in	7.62 mm
ON Semiconductor CNY17F4TVM	6-DIP	70 V	60 mA	400 mV	2 µs 3 µs	50 mA	1.35 V	1	Through Hole	6-DIP	160 %	4 µs	3.5 µs	4170 Vrms	320 %	DC	100 °C	-40 °C	1.81 mOhm		10.16 mm	10.16 mm
ON Semiconductor CNY17F4SR2VM	6-SMD	70 V	60 mA	400 mV	2 µs 3 µs	50 mA	1.35 V	1	Surface Mount	6-SMD Gull Wing	160 %	4 µs	3.5 µs	4170 Vrms	320 %	DC	100 °C	-40 °C	1.81 mOhm
ON Semiconductor CNY17F4M	6-DIP	70 V	60 mA	400 mV	2 µs 3 µs	50 mA	1.35 V	1	Through Hole	6-DIP	160 %	4 µs	3.5 µs	4170 Vrms	320 %	DC	100 °C	-40 °C	1.81 mOhm	0.3 in	7.62 mm

Catalog

6-Pin DIP High BVCEO Phototransistor Output Optocoupler

Key Features

• High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)

• Closely Matched Current Transfer Ratio (CTR)

• Minimizes Unit-to-Unit Variation

• Current Transfer Ratio In Select Groups

• Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M)

• Safety and Regulatory Approvals:

• UL1577, 4,170 VACRMSfor 1 Minute

• DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage

Description

The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.