
Integrated Circuits (ICs)
IS61WV12816DBLL-10BLI
ActiveISSI, Integrated Silicon Solution Inc
SRAM CHIP ASYNC SINGLE 2.5V/3.3V 2M-BIT 128K X 16 10NS 48-PIN MINI-BGA
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Integrated Circuits (ICs)
IS61WV12816DBLL-10BLI
ActiveISSI, Integrated Silicon Solution Inc
SRAM CHIP ASYNC SINGLE 2.5V/3.3V 2M-BIT 128K X 16 10NS 48-PIN MINI-BGA
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IS61WV12816DBLL-10BLI |
|---|---|
| Access Time | 10 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization [custom] | 128 K |
| Memory Size | 2 Gbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-TFBGA (6x8) |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 3 V |
| Write Cycle Time - Word, Page | 10 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 476 | $ 3.61 | |
| Tray | 480 | $ 2.77 | ||
Description
General part information
IS61WV12816 Series
High-speed access time: 8, 10, 12, 20 ns
Low Active Power: 135 mW (typical)
Low Standby Power: 12 µW (typical) CMOS standby
Documents
Technical documentation and resources
No documents available