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IS66WV51216EBLL-70BLI-TR
Integrated Circuits (ICs)

IS61WV12816DBLL-10BLI

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ISSI, Integrated Silicon Solution Inc

SRAM CHIP ASYNC SINGLE 2.5V/3.3V 2M-BIT 128K X 16 10NS 48-PIN MINI-BGA

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IS66WV51216EBLL-70BLI-TR
Integrated Circuits (ICs)

IS61WV12816DBLL-10BLI

Active
ISSI, Integrated Silicon Solution Inc

SRAM CHIP ASYNC SINGLE 2.5V/3.3V 2M-BIT 128K X 16 10NS 48-PIN MINI-BGA

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIS61WV12816DBLL-10BLI
Access Time10 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization [custom]128 K
Memory Size2 Gbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 C
Operating Temperature [Min]-40 ¯C
Package / Case48-TFBGA
Supplier Device Package48-TFBGA (6x8)
TechnologySRAM - Asynchronous
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]3 V
Write Cycle Time - Word, Page10 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 476$ 3.61
Tray 480$ 2.77

Description

General part information

IS61WV12816 Series

High-speed access time: 8, 10, 12, 20 ns

Low Active Power: 135 mW (typical)

Low Standby Power: 12 µW (typical) CMOS standby

Documents

Technical documentation and resources

No documents available