IS61WV12816 Series
Manufacturer: ISSI, Integrated Silicon Solution Inc
IC SRAM 2MBIT PAR
| Part | Memory Size | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Interface | Memory Organization [custom] | Memory Type | Write Cycle Time - Word, Page | Supplier Device Package | Package / Case | Access Time | Memory Format |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 2 Gbit | Surface Mount | 85 C | -40 ¯C | SRAM - Asynchronous | 3.6 V | 2.4 V | Parallel | 128 K | Volatile | 10 ns | 44-TSOP II | 44-TSOP (0.400" 10.16mm Width) | 10 ns | SRAM |
ISSI, Integrated Silicon Solution Inc | 2 Gbit | Surface Mount | 85 C | -40 ¯C | SRAM - Asynchronous | 3.6 V | 2.4 V | Parallel | 128 K | Volatile | 10 ns | 44-TSOP II | 44-TSOP (0.400" 10.16mm Width) | 10 ns | SRAM |
ISSI, Integrated Silicon Solution Inc | 2 Gbit | Surface Mount | 85 C | -40 ¯C | SRAM - Asynchronous | 3.6 V | 2.4 V | Parallel | 128 K | Volatile | 10 ns | 44-TSOP II | 44-TSOP (0.400" 10.16mm Width) | 10 ns | SRAM |
ISSI, Integrated Silicon Solution Inc | 2 Gbit | Surface Mount | 85 C | -40 ¯C | SRAM - Asynchronous | 3.6 V | 3 V | Parallel | 128 K | Volatile | 10 ns | 48-TFBGA (6x8) | 48-TFBGA | 10 ns | SRAM |
ISSI, Integrated Silicon Solution Inc | 2 Gbit | Surface Mount | 85 C | -40 ¯C | SRAM - Asynchronous | 3.6 V | 3 V | Parallel | 128 K | Volatile | 10 ns | 48-TFBGA (6x8) | 48-TFBGA | 10 ns | SRAM |
ISSI, Integrated Silicon Solution Inc | 2 Gbit | Surface Mount | 85 C | -40 ¯C | SRAM - Asynchronous | 3.6 V | 3 V | Parallel | 128 K | Volatile | 12 ns | 44-TSOP II | 44-TSOP (0.400" 10.16mm Width) | 12 ns | SRAM |
ISSI, Integrated Silicon Solution Inc | 2 Gbit | Surface Mount | 85 C | -40 ¯C | SRAM - Asynchronous | 3.6 V | 3 V | Parallel | 128 K | Volatile | 10 ns | 44-TSOP II | 44-TSOP (0.400" 10.16mm Width) | 10 ns | SRAM |