Specification	NTZD5110NT1G

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	294 mA
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	0.7 nC
Input Capacitance (Ciss) (Max) @ Vds	24.5 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-666, SOT-563
Power - Max [Max]	250 mW
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	SOT-563
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

NTZD5110N Series

Dual N-Channel Small Signal MOSFET with ESD Protection 60V, 310mA, 1.6Ω

Part	Package / Case	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Supplier Device Package
ON Semiconductor NTZD5110NT5G	SOT-563 SOT-666	250 mW	1.6 Ohm	2 N-Channel (Dual)	-55 °C	150 °C	24.5 pF	294 mA	2.5 V	60 V	Surface Mount	MOSFET (Metal Oxide)	0.7 nC	Logic Level Gate	SOT-563
ON Semiconductor NTZD5110NT1G	SOT-563 SOT-666	250 mW	1.6 Ohm	2 N-Channel (Dual)	-55 °C	150 °C	24.5 pF	294 mA	2.5 V	60 V	Surface Mount	MOSFET (Metal Oxide)	0.7 nC	Logic Level Gate	SOT-563

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This is a 60 V N-Channel Power MOSFET.

Technical documentation and resources