NTZD5110N Series

Dual N-Channel Small Signal MOSFET with ESD Protection 60V, 310mA, 1.6Ω

Catalog

Dual N-Channel Small Signal MOSFET with ESD Protection 60V, 310mA, 1.6Ω

Part	Package / Case	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Supplier Device Package
ON Semiconductor NTZD5110NT5G	SOT-563 SOT-666	250 mW	1.6 Ohm	2 N-Channel (Dual)	-55 °C	150 °C	24.5 pF	294 mA	2.5 V	60 V	Surface Mount	MOSFET (Metal Oxide)	0.7 nC	Logic Level Gate	SOT-563
ON Semiconductor NTZD5110NT1G	SOT-563 SOT-666	250 mW	1.6 Ohm	2 N-Channel (Dual)	-55 °C	150 °C	24.5 pF	294 mA	2.5 V	60 V	Surface Mount	MOSFET (Metal Oxide)	0.7 nC	Logic Level Gate	SOT-563

Dual N-Channel Small Signal MOSFET with ESD Protection 60V, 310mA, 1.6Ω

• Low RDS(on)Improving System Efficiency

• Low Threshold Voltage

• ESD Protected Gate

• Small Footprint 1.6 x 1.6 mm

This is a 60 V N-Channel Power MOSFET.