Discrete Semiconductor Products
2N5116UB
UnknownMicrochip Technology
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 30V, 1-ELEMENT, P-CHANNEL, SILICON, JUNCTION FET
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Search across all available documentation for this part.
Documents2N5114UB-2N5116UB
Discrete Semiconductor Products
2N5116UB
UnknownMicrochip Technology
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 30V, 1-ELEMENT, P-CHANNEL, SILICON, JUNCTION FET
Deep-Dive with AI
Documents2N5114UB-2N5116UB
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5116UB |
|---|---|
| Current - Drain (Idss) @ Vds (Vgs=0) | 15 V, 25 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type | P-Channel |
| Grade | Military |
| Input Capacitance (Ciss) (Max) @ Vds | 27 pF |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Power - Max [Max] | 500 mW |
| Qualification | MIL-PRF-19500 |
| Resistance - RDS(On) | 175 Ohms |
| Supplier Device Package | UB |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Voltage - Cutoff (VGS off) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 51.37 | |
| Microchip Direct | N/A | 1 | $ 55.33 | |
| Newark | Each | 100 | $ 51.37 | |
| 500 | $ 49.40 | |||
Description
General part information
2N5116UB-JFET-PChannel Series
This specification covers the performance requirements for P-channel, junction, silicon field-effect, 2N5114 Through 2N5116 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/476.
Documents
Technical documentation and resources