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STMICROELECTRONICS STPSC10H065DLF
Discrete Semiconductor Products

STPSC8H065DLF

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 8 A, 26 NC, POWERFLAT

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet ENProduct Change Notice EN+13
STMICROELECTRONICS STPSC10H065DLF
Discrete Semiconductor Products

STPSC8H065DLF

Active
STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 8 A, 26 NC, POWERFLAT

Deep-Dive with AI

DocumentsTechnical Data Sheet ENProduct Change Notice EN+13

Technical Specifications

Parameters and characteristics for this part

SpecificationSTPSC8H065DLF
Capacitance @ Vr, F460 pF
Current - Average Rectified (Io)8 A
Current - Reverse Leakage @ Vr80 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-40 °C
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackagePowerFlat™ (8x8) HV
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 3937$ 4.10
NewarkEach (Supplied on Cut Tape) 1$ 4.16
10$ 3.30
25$ 3.14
50$ 2.98
100$ 2.82
250$ 2.71
500$ 2.59
1000$ 2.33

Description

General part information

STPSC8H065DLF Series

This 8 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Qualified in low profile package, the STPSC8H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains.