Specification	PMXB120EPEZ

Current - Continuous Drain (Id) @ 25°C	2.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	309 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XDFN Exposed Pad
Power Dissipation (Max)	400 mW, 8.3 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	DFN1010D-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

PMXB120EPE Series

30 V, P-channel Trench MOSFET

Part	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)
Freescale Semiconductor - NXP PMXB120EPEZ	DFN1010D-3	3-XDFN Exposed Pad	2.5 V	120 mOhm	MOSFET (Metal Oxide)	30 V	11 nC	4.5 V 10 V	309 pF	P-Channel	-55 °C	150 °C	Surface Mount	2.4 A	20 V	8.3 W 400 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.49
		10	$ 0.32
		100	$ 0.17
		500	$ 0.15
		1000	$ 0.12
		2000	$ 0.12
	Digi-Reel®	1	$ 0.49
		10	$ 0.32
		100	$ 0.17
		500	$ 0.15
		1000	$ 0.12
		2000	$ 0.12
	Tape & Reel (TR)	5000	$ 0.09
		10000	$ 0.09
		15000	$ 0.08
		25000	$ 0.08

Description

General part information

PMXB120EPE Series

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.