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30 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Supplier Device Package | Package / Case | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Technology | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | DFN1010D-3 | 3-XDFN Exposed Pad | 2.5 V | 120 mOhm | MOSFET (Metal Oxide) | 30 V | 11 nC | 4.5 V 10 V | 309 pF | P-Channel | -55 °C | 150 °C | Surface Mount | 2.4 A | 20 V | 8.3 W 400 mW |