Specification	STP3NK90Z

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22.7 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	4.8 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STP3NK90Z Series

N-channel 900 V, 4.1 Ohm typ., 3 A SuperMESH Power MOSFET in TO-220 package

Part	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
STMicroelectronics STP3NK90Z	TO-220-3	30 V	900 V	4.8 Ohm	150 °C	-55 °C	3 A	22.7 nC	N-Channel	MOSFET (Metal Oxide)	Through Hole	90 W	TO-220	10 V	4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	204	$ 2.74
Newark	Each	1	$ 2.27
		10	$ 1.58
		100	$ 1.50
		500	$ 1.30
		1000	$ 1.16
		2500	$ 0.96

Description

General part information

STP3NK90Z Series

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.