Discrete Semiconductor Products
R8008ANJGTL
ActiveRohm Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 800V, 1.03OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB, TO-263, SC-83, D2PAK-3/2
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Search across all available documentation for this part.
Discrete Semiconductor Products
R8008ANJGTL
ActiveRohm Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 800V, 1.03OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB, TO-263, SC-83, D2PAK-3/2
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Technical Specifications
Parameters and characteristics for this part
| Specification | R8008ANJGTL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 38 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 195 W |
| Rds On (Max) @ Id, Vgs | 1.03 Ohm |
| Supplier Device Package | TO-263S |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 5.60 | |
| 10 | $ 4.70 | |||
| 100 | $ 3.81 | |||
| 500 | $ 3.38 | |||
| Digi-Reel® | 1 | $ 5.60 | ||
| 10 | $ 4.70 | |||
| 100 | $ 3.81 | |||
| 500 | $ 3.38 | |||
| Tape & Reel (TR) | 1000 | $ 2.62 | ||
Description
General part information
R8008ANJ Series
R8008ANJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Documents
Technical documentation and resources