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R8008ANJGTLActive
Rohm Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 8A I(D), 800V, 1.03OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB, TO-263, SC-83, D2PAK-3/2
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Moisture Sensitivity Level - Transistors