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TO-247-3
Discrete Semiconductor Products

FGHL40T65LQDT

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ON Semiconductor

FS4 LOW VCESAT IGBT 650V 40A TO247-3L WITH FULL RATED CURRENT DIODE/ TUBE

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TO-247-3
Discrete Semiconductor Products

FGHL40T65LQDT

Active
ON Semiconductor

FS4 LOW VCESAT IGBT 650V 40A TO247-3L WITH FULL RATED CURRENT DIODE/ TUBE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFGHL40T65LQDT
Current - Collector (Ic) (Max) [Max]60 A
Gate Charge414 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]273 W
Reverse Recovery Time (trr)84 ns
Supplier Device PackageTO-247-3
Switching Energy620 µJ, 1.03 mJ
Td (on/off) @ 25°C24 ns
Td (on/off) @ 25°C364 ns
Test Condition400 V, 20 A, 15 V, 4.7 Ohm
Vce(on) (Max) @ Vge, Ic1.35 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.34
30$ 2.44
120$ 2.04
NewarkEach 250$ 2.24
500$ 2.18
ON SemiconductorN/A 1$ 2.18

Description

General part information

FGHL40T65LQDT Series

ON Semiconductor's series of field stop 4th generation IGBTs offer the optimum performance by balancing Vce(sat) and Eoff losses and controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other high performance power conversion applications.

Documents

Technical documentation and resources