FGHL40T65LQDT Series

IGBT - 650 V 40 A FS4 low Vce(sat) IGBT with full rated copack diode

Catalog

IGBT - 650 V 40 A FS4 low Vce(sat) IGBT with full rated copack diode

Part	Voltage - Collector Emitter Breakdown (Max)	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Gate Charge	Mounting Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Switching Energy	Supplier Device Package	IGBT Type	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition
ON Semiconductor FGHL40T65LQDT	650 V	1.35 V	273 W	414 nC	Through Hole	24 ns	364 ns	1.03 mJ 620 µJ	TO-247-3	Trench Field Stop	60 A	84 ns	TO-247-3	-55 °C	175 ░C	4.7 Ohm 15 V 20 A 400 V

Catalog

IGBT - 650 V 40 A FS4 low Vce(sat) IGBT with full rated copack diode

Key Features

• Positive temperature co-efficient

• Low Vce(sat)

Description

ON Semiconductor's series of field stop 4th generation IGBTs offer the optimum performance by balancing Vce(sat) and Eoff losses and controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other high performance power conversion applications.