Discrete Semiconductor Products
SCT3060ARC15
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 39 A, 650 V, 0.06 OHM, TO-247
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Discrete Semiconductor Products
SCT3060ARC15
ActiveRohm Semiconductor
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 39 A, 650 V, 0.06 OHM, TO-247
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCT3060ARC15 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 39 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 58 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 852 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) [Max] | 165 W |
| Rds On (Max) @ Id, Vgs | 78 mOhm |
| Supplier Device Package | TO-247-4L |
| Technology | SiC (Silicon Carbide Junction Transistor) |
SCT3060 Series
650V, 39A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Supplier Device Package | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Package / Case | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | SiC (Silicon Carbide Junction Transistor) | 39 A | 175 °C | TO-247-4L | N-Channel | 852 pF | 58 nC | 165 W | Through Hole | 18 V | 650 V | 78 mOhm | TO-247-4 | ||
 Rohm Semiconductor | MOSFET (Metal Oxide) | 39 A | 175 °C | TO-247-4L | N-Channel | 852 pF | 58 nC | 165 W | Through Hole | 18 V | 650 V | 78 mOhm | TO-247-4 | Automotive | AEC-Q101 |
 Rohm Semiconductor | 38 A | 175 °C | TO-263-7 | N-Channel | 852 pF | 58 nC | 159 W | Surface Mount | 650 V | 78 mOhm | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | ||||
 Rohm Semiconductor | 39 A | 175 °C | TO-247N | N-Channel | 852 pF | 58 nC | 165 W | Through Hole | 18 V | 650 V | 78 mOhm | TO-247-3 | Automotive | AEC-Q101 | |
 Rohm Semiconductor | 39 A | 175 °C | TO-247-4L | N-Channel | 852 pF | 58 nC | 165 W | Through Hole | 18 V | 650 V | 78 mOhm | TO-247-4 |
Pricing
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Description
General part information
SCT3060 Series
SCT3060AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
Documents
Technical documentation and resources