Discrete Semiconductor Products
SCT3060ALHRC11
ActiveRohm Semiconductor
650V, 39A, THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
SCT3060ALHRC11
ActiveRohm Semiconductor
650V, 39A, THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT3060ALHRC11 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 39 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 58 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 852 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 165 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 78 mOhm |
| Supplier Device Package | TO-247N |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SCT3060 Series
SCT3060AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.
Documents
Technical documentation and resources
