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MFG_DPAK(TO252-3)
Discrete Semiconductor Products

STD8N60DM2

Active
STMicroelectronics

N-CHANNEL 600 V, 550 MOHM TYP., 8 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE

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Search across all available documentation for this part.

DocumentsAN2344+20
MFG_DPAK(TO252-3)
Discrete Semiconductor Products

STD8N60DM2

Active
STMicroelectronics

N-CHANNEL 600 V, 550 MOHM TYP., 8 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

DocumentsAN2344+20

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD8N60DM2
Current - Continuous Drain (Id) @ 25°C8 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13.5 nC
Input Capacitance (Ciss) (Max) @ Vds375 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]85 W
Rds On (Max) @ Id, Vgs600 mOhm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.37
10$ 1.12
100$ 0.87
500$ 0.74
1000$ 0.60
Digi-Reel® 1$ 1.37
10$ 1.12
100$ 0.87
500$ 0.74
1000$ 0.60
Tape & Reel (TR) 2500$ 0.57
5000$ 0.54
12500$ 0.52
NewarkEach (Supplied on Cut Tape) 1$ 1.66
10$ 1.31
25$ 1.21
50$ 1.10
100$ 1.00
250$ 0.94
500$ 0.89
1000$ 0.83

Description

General part information

STD8N60DM2 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.