Discrete Semiconductor Products

FQE10N20CTU

Obsolete

MOSFET N-CH 200V 4A TO126-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 4A TO126-3

Technical Specifications

Parameters and characteristics for this part

Specification	FQE10N20CTU

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	510 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-225AA, TO-126-3
Power Dissipation (Max) [Max]	12.8 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	TO-126-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	FET Type
ON Semiconductor FQE10N20CTU	200 V	10 V	26 nC	Through Hole	MOSFET (Metal Oxide)	12.8 W	510 pF	360 mOhm	30 V	TO-126-3	-55 °C	150 °C	4 A	TO-126-3 TO-225AA	4 V	N-Channel
ON Semiconductor FQE10N20CTU	200 V	10 V	26 nC	Through Hole	MOSFET (Metal Oxide)	12.8 W	510 pF	360 mOhm	30 V	TO-126-3	-55 °C	150 °C	4 A	TO-126-3 TO-225AA	4 V	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 4A (Tc) 12.8W (Tc) Through Hole TO-126-3

Technical documentation and resources