FQE1 Series

Catalog

MOSFET N-CH 200V 4A TO126-3

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	FET Type
ON Semiconductor FQE10N20CTU	200 V	10 V	26 nC	Through Hole	MOSFET (Metal Oxide)	12.8 W	510 pF	360 mOhm	30 V	TO-126-3	-55 °C	150 °C	4 A	TO-126-3 TO-225AA	4 V	N-Channel
ON Semiconductor FQE10N20CTU	200 V	10 V	26 nC	Through Hole	MOSFET (Metal Oxide)	12.8 W	510 pF	360 mOhm	30 V	TO-126-3	-55 °C	150 °C	4 A	TO-126-3 TO-225AA	4 V	N-Channel