
Discrete Semiconductor Products
TSM085N03PQ33
ActiveTaiwan Semiconductor Corporation
30V, 52A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS
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Discrete Semiconductor Products
TSM085N03PQ33
ActiveTaiwan Semiconductor Corporation
30V, 52A, SINGLE, N-CHANNEL LOW VOLTAGE MOSFETS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TSM085N03PQ33 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13 A, 52 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 817 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerWDFN |
| Power Dissipation (Max) | 37 W, 2.3 W |
| Rds On (Max) @ Id, Vgs | 8.5 mOhm |
| Supplier Device Package | 8-PDFN (3.1x3.1) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
| Part | Vgs (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | FET Type | Package / Case | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Technology | Power Dissipation (Max) | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 20 V | 8.5 mOhm | -55 °C | 150 °C | 8-PDFN (3.1x3.1) | 817 pF | Surface Mount | 52 A | 2.5 V | N-Channel | 8-PowerWDFN | 37 W | 14.3 nC | 4.5 V 10 V | 30 V | MOSFET (Metal Oxide) | |||
Taiwan Semiconductor Corporation | 20 V | -55 °C | 150 °C | 8-PDFN (3.1x3.1) | Surface Mount | 64 A | 2.5 V | P-Channel | 8-PowerWDFN | 50 W | 55 nC | 4.5 V 10 V | 30 V | MOSFET (Metal Oxide) | |||||
Taiwan Semiconductor Corporation | 20 V | 8.5 mOhm | -55 °C | 150 °C | 8-PDFN (3.1x3.1) | 817 pF | Surface Mount | 13 A 52 A | 2.5 V | N-Channel | 8-PowerWDFN | 14.3 nC | 4.5 V 10 V | 30 V | MOSFET (Metal Oxide) | 2.3 W 37 W | |||
Taiwan Semiconductor Corporation | 20 V | 8.5 mOhm | -55 °C | 150 °C | 8-SOP | 3216 pF | Surface Mount | 34 A | 2.5 V | P-Channel | 8-SOIC | 14 W | 56 nC | 4.5 V 10 V | 30 V | MOSFET (Metal Oxide) | 3.9 mm | 0.154 in |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.53 | |
Description
General part information
TSM085 Series
N-Channel 30 V 13A (Ta), 52A (Tc) 2.3W (Ta), 37W (Tc) Surface Mount 8-PDFN (3.1x3.1)
Documents
Technical documentation and resources