TSM085 Series

Manufacturer: Taiwan Semiconductor Corporation

Catalog

MOSFET 2N-CH 30V 12A 8PDFNU

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	FET Feature	Power - Max	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package [y]	Supplier Device Package [x]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Package / Case	Package / Case
Taiwan Semiconductor Corporation TSM085NB03DCR RLG	8-PDFNU (5x6)	8.5 mOhm	8-PowerTDFN	1091 pF	2 N-Channel (Dual)	30 V	2.5 V	150 °C	-55 °C	Logic Level Gate	2 W 40 W	20 nC	Surface Mount	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TSM085N03PQ33 RGG	8-PDFN	8.5 mOhm	8-PowerWDFN			30 V	2.5 V	150 °C	-55 °C				Surface Mount	MOSFET (Metal Oxide)	14.3 nC	37 W	4.5 V 10 V	N-Channel	3.1	3.1	52 A	20 V	817 pF
Taiwan Semiconductor Corporation TSM085P03CV RGG	8-PDFN	8.5 mOhm	8-PowerWDFN			30 V	2.5 V	150 °C	-55 °C			55 nC	Surface Mount	MOSFET (Metal Oxide)		50 W	4.5 V 10 V	P-Channel	3.1	3.1	64 A	20 V
Taiwan Semiconductor Corporation TSM085N03PQ33	8-PDFN	8.5 mOhm	8-PowerWDFN			30 V	2.5 V	150 °C	-55 °C				Surface Mount	MOSFET (Metal Oxide)	14.3 nC	2.3 W 37 W	4.5 V 10 V	N-Channel	3.1	3.1	13 A 52 A	20 V	817 pF
Taiwan Semiconductor Corporation TSM085P03CS RLG	8-SOP	8.5 mOhm	8-SOIC			30 V	2.5 V	150 °C	-55 °C				Surface Mount	MOSFET (Metal Oxide)	56 nC		4.5 V 10 V	P-Channel			34 A	20 V	3216 pF	14 W	0.154 in	3.9 mm