Discrete Semiconductor Products
FDG328P
ActiveON Semiconductor
P-CHANNEL 2.5V SPECIFIED POWERTRENCH<SUP>®</SUP> MOSFET -20 V, -1.5 A, 145 MΩ
Discrete Semiconductor Products
FDG328P
ActiveON Semiconductor
P-CHANNEL 2.5V SPECIFIED POWERTRENCH<SUP>®</SUP> MOSFET -20 V, -1.5 A, 145 MΩ
Technical Specifications
Parameters and characteristics for this part
| Specification | FDG328P |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 2.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 337 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power Dissipation (Max) | 750 mW |
| Rds On (Max) @ Id, Vgs | 145 mOhm |
| Supplier Device Package | SC-88 (SC-70-6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Newark | Each (Supplied on Cut Tape) | 2500 | $ 0.19 | |
Description
General part information
FDG328P Series
This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V).
Documents
Technical documentation and resources