FDG328P Series

P-Channel 2.5V Specified PowerTrench® MOSFET -20 V, -1.5 A, 145 mΩ

Catalog

P-Channel 2.5V Specified PowerTrench® MOSFET -20 V, -1.5 A, 145 mΩ

Part	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDG328P	20 V	6-TSSOP SC-88 SOT-363	1.5 A	12 V	6 nC	1.5 V	SC-88 (SC-70-6)	Surface Mount	145 mOhm	P-Channel	750 mW	MOSFET (Metal Oxide)	337 pF	2.5 V 4.5 V	-55 °C	150 °C

Catalog

P-Channel 2.5V Specified PowerTrench® MOSFET -20 V, -1.5 A, 145 mΩ

Key Features

-1.5 A, -20 V

• RDS(ON)= 0.145Ω @ VGS= -4.5 V

• RDS(ON)= 0.210Ω @ VGS= -2.5 V

• Low gate charge

• High performance trench technology for extremelylow RDS(ON)

• Compact industry standard SC70-6 surface mountpackage

Description

This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V).