Specification	NTHL025N065SC1

Current - Continuous Drain (Id) @ 25°C	99 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	164 nC
Input Capacitance (Ciss) (Max) @ Vds	3480 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	348 W
Rds On (Max) @ Id, Vgs [Max]	28.5 mOhm
Supplier Device Package	TO-247-3
Vgs(th) (Max) @ Id	4.3 V

NTHL025N065SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTHL025N065SC1	99 A	TO-247-3	348 W	3480 pF	N-Channel	28.5 mOhm	-55 °C	175 ░C	TO-247-3	4.3 V	Through Hole	164 nC	650 V	15 V 18 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 19.82
		10	$ 17.46
		450	$ 13.68
ON Semiconductor	N/A	1	$ 12.46

Description

General part information

NTHL025N065SC1 Series

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

Package Drawing-340CX-TO-247-3LD

Package Drawing