NTHL025N065SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTHL025N065SC1	99 A	TO-247-3	348 W	3480 pF	N-Channel	28.5 mOhm	-55 °C	175 ░C	TO-247-3	4.3 V	Through Hole	164 nC	650 V	15 V 18 V

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L

Key Features

• Tj = 175°C

• Ultra Low Gate Charge (Typ. Qg = 164 nC)

• High Speed Switching with Low Capacitance (Coss = 278 pF)

• Zero reverse recovery current of body diode

• Max RDS(on) = 19 mΩ at Vgs = 18V

• 100% UIL Tested

• RoHS Compliant

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.