Discrete Semiconductor Products

STH80N10F7-2

Obsolete

MOSFET N-CH 100V 80A H2PAK-2

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 80A H2PAK-2

Technical Specifications

Parameters and characteristics for this part

Specification	STH80N10F7-2

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds	3100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	H2Pak-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)
STMicroelectronics STH80N10F7-2	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	45 nC	H2Pak-2	10 V	110 W	3100 pF	100 V	MOSFET (Metal Oxide)	175 °C	-55 °C	N-Channel	9.5 mOhm	4.5 V	Surface Mount	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.94

General part information

N-Channel 100 V 80A (Tc) 110W (Tc) Surface Mount H2PAK-2

Technical documentation and resources