Specification	RN2710,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-353, SC-70-5, 5-TSSOP
Power - Max [Max]	200 mW
Resistor - Base (R1)	4.7 kOhms
Supplier Device Package	USV
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

RN2710 Series

Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/Infinity, SOT-353(USV)

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Base (R1)	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Power - Max [Max]
Toshiba Semiconductor and Storage RN2710,LF	120	4.7 kOhms	300 mV	Surface Mount	USV	5-TSSOP SC-70-5 SOT-353	100 mA	50 V	2 PNP - Pre-Biased (Dual)	100 nA	200 MHz	200 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/Infinity, SOT-353(USV)

Technical documentation and resources