Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/Infinity, SOT-353(USV)
Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/Infinity, SOT-353(USV)
Bipolar Transistors, PNP x 2 Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/Infinity, SOT-353(USV)
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Resistor - Base (R1) | Vce Saturation (Max) @ Ib, Ic | Mounting Type | Supplier Device Package | Package / Case | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Transistor Type | Current - Collector Cutoff (Max) [Max] | Frequency - Transition | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 120 | 4.7 kOhms | 300 mV | Surface Mount | USV | 5-TSSOP SC-70-5 SOT-353 | 100 mA | 50 V | 2 PNP - Pre-Biased (Dual) | 100 nA | 200 MHz | 200 mW |