Specification	NTMTS0D4N04CLTXG

Current - Continuous Drain (Id) @ 25°C	79.8 A, 553.8 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	341 nC
Input Capacitance (Ciss) (Max) @ Vds	20600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	244 W, 5 W
Rds On (Max) @ Id, Vgs	0.4 mOhm
Supplier Device Package	8-DFNW
Supplier Device Package [x]	8.3
Supplier Device Package [y]	8.4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

NTMTS0D7N06CL Series

Single N-Channel Power MOSFET 40V, 553.8A, 0.4mΩ, PQFN 8x8

Part	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTMTS0D4N04CLTXG	2.5 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	20 V	8.3	8-DFNW	8.4	40 V	20600 pF	341 nC	5 W 244 W	N-Channel	79.8 A 553.8 A	Surface Mount	8-PowerTDFN	0.4 mOhm	4.5 V 10 V
ON Semiconductor NTMTS0D7N06CLTXG	2.5 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	20 V	8.3	8-DFNW	8.4	60 V	16200 pF			N-Channel	62.2 A	Surface Mount	8-PowerTDFN		4.5 V 10 V	0.68 mOhm	5 W	294.6 W	225 nC	477 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 6.75
		10	$ 4.56
		100	$ 3.31
		500	$ 2.83
	Digi-Reel®	1	$ 6.75
		10	$ 4.56
		100	$ 3.31
		500	$ 2.83
	Tape & Reel (TR)	3000	$ 2.83
Newark	Each	500	$ 3.08
ON Semiconductor	N/A	1	$ 1.64

Description

General part information

NTMTS0D7N06CL Series

This N-Channel T6 60V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.